生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | 风险等级: | 5.28 |
配置: | SINGLE | 最小漏源击穿电压: | 900 V |
最大漏极电流 (ID): | 4 A | 最大漏源导通电阻: | 4 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK1528L | HITACHI |
获取价格 |
Silicon N-Channel MOS FET | |
2SK1528L | RENESAS |
获取价格 |
Silicon N Channel MOS FET | |
2SK1528L-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET | |
2SK1528S | RENESAS |
获取价格 |
Silicon N Channel MOS FET | |
2SK1528S | HITACHI |
获取价格 |
Silicon N-Channel MOS FET | |
2SK1528S-E | RENESAS |
获取价格 |
4A, 900V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | |
2SK1528STL-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET | |
2SK1528STR-E | RENESAS |
获取价格 |
Nch Single Power MOSFET 900V 4A 4000mohm LDPAK(S)-(1)/TO-263 | |
2SK1529 | TOSHIBA |
获取价格 |
N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS) | |
2SK1529_06 | TOSHIBA |
获取价格 |
N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS) |