2SK1228

更新时间： 2024-11-22 22:45:07

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
2页	38K
描述
Silicon N-Channel MOS FET

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中文翻译

获取价格

数据手册

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2SK1228 数据手册

Silicon MOS FETs (Small Signal)

2SK1228

Silicon N-Channel MOS FET

For switching

unit: mm

2.8 –⁺0⁰.^.3²

0.65±0.15

1.5 –⁺0⁰.^.0²5⁵

0.65±0.15

■ Features

● High-speed switching

● Wide frequency band

● Incorporating a built-in gate protection-diode

● Allowing 2.5V drive

■ Absolute Maximum Ratings (Ta = 25°C)

Parameter

Drain to Source voltage

Gate to Source voltage

Drain current

Symbol

V_DS

V_GSO

I_D

Ratings

Unit

0.1 to 0.3

0.4±0.2

°C

Max drain current

I_DP

100

1: Gate

2: Source

3: Drain

JEDEC: TO-236

EIAJ: SC-59

Mini Type Package (3-pin)

Allowable power dissipation

Channel temperature

Storage temperature

P_D

150

T_ch

150

Marking Symbol: 4V

T_stg

−55 to +150

°C

■ Electrical Characteristics (Ta = 25°C)

Parameter

Symbol

I_DSS

Conditions

min

typ

max

Unit

µA

Drain to Source cut-off current

Gate to Source leakage current

V_DS= 20V, V_GS= 0

I_GSS

V_GS= 10V, V_DS= 0

I_D= 10µA, V_GS= 0

I_D= 100µA, V_DS= 5V

Drain to Source breakdown voltage V_DSS

100

0.8

Gate threshold voltage

V_th

0.5

1.1

Drain to Source ON-resistance

Forward transfer admittance

R_DS(on)

| Y_fs|

_D= 10mA, V_GS= 2.5V

Ω

I_D= 10mA, V_DS= 5V, f = 1kHz

V_DS= 5V, V_GS= 0, f = 1MHz

µs

Input capacitance (Common Source) C_iss

Output capacitance (Common Source) C_oss

Reverse transfer capacitance (Common Source) C_rss

4.5

4.1

1.2

0.2

Turn-on time

Turn-off time

t_on

V_DD= 5V, V_GS= 0 to 2.5V, R_L= 470Ω

V_DD= 5V, V_GS= 2.5 to 0V, R_L= 470Ω

t_off

µs

¹Pulse measurement

²t_on, t_offmeasurement circuit

V_out

470Ω

90%

10%

V_in

V_out

V_GS= 2.5V

V_DD= 5V

10%

90%

50Ω

t_on

t_off

中文翻译

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