Datasheet > 2SK1151_11

2SK1151_11

更新时间： 2022-09-18 11:42:17

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
7页	120K
描述
Silicon N Channel MOS FET

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数据手册

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2SK1151_11 数据手册

2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)

Preliminary

Main Characteristics

Power vs. Temperature Derating

Maximum Safe Operation Area

1.0

0.3

0.1

2SK1151

2SK1152

0.03

0.01

Ta = 25°C

100

150

100

1,000

Case Temperature T_C(°C)

Drain to Source Voltage V_DS(V)

Typical Transfer Characteristics

Typical Output Characteristics

2.0

1.6

1.2

0.8

0.4

2.0

1.6

1.2

0.8

0.4

15 V

5 V

V_DS= 20 V

Pulse Test

6 V

Pulse Test

10 V

4.5 V

4 V

–25°C

75°C

V_GS= 3.5 V

T_C= 25°C

Drain to Source Voltage V_DS(V)

Gate to Source Voltage V_GS(V)

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

Static Drain to Source on State

Resistance vs. Drain Current

100

Pulse Test

V_GS= 10 V

2 A

15 V

1 A

I_D= 0.5 A

0.05 0.1 0.2

0.5 1.0

Gate to Source Voltage V_GS(V)

Drain Current I_D(A)

R07DS0397EJ0300 Rev.3.00

May 16, 2011

Page 3 of 6

1 234 5 6 7

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