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2SK1151S PDF预览

2SK1151S

更新时间: 2024-02-25 16:03:58
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管开关脉冲ISM频段
页数 文件大小 规格书
1页 45K
描述
Silicon N-Channel MOSFET

2SK1151S 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
零件包装代码:DPAK(S)包装说明:SC-63, DPAK-3/2
针数:4Reach Compliance Code:compliant
风险等级:5.82外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:450 V
最大漏极电流 (ID):1.5 A最大漏源导通电阻:5.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):6 A表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

2SK1151S 数据手册

  
SMD Type  
MOSFET  
Silicon N-Channel MOSFET  
2SK1151S  
TO-252  
Unit: mm  
Features  
+0.15  
-0.15  
+0.1  
2.30  
-0.1  
6.50  
+0.2  
5.30  
-0.2  
+0.8  
0.50  
-0.7  
Low on-resistance  
High speed switching  
Low drive current  
0.127  
max  
+0.1  
0.80  
-0.1  
No secondary breakdown  
Suitable for switching regulator and DC-DC converter  
1 Gate  
+0.1  
0.60  
-0.1  
2.3  
4.60  
2 Drain  
3 Source  
+0.15  
-0.15  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to source voltage  
Gate to source voltage  
Drain current (DC)  
Symbol  
VDSS  
VGSS  
ID  
Rating  
Unit  
V
450  
V
30  
1.5  
A
Drain current(pulse) *  
Power dissipation  
ID  
6
20  
A
PD  
W
Channel temperature  
Storage temperature  
Tch  
150  
Tstg  
-55 to +150  
* PW 10 s, duty cycle  
1%  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
450  
30  
Typ  
Max  
Unit  
V
Drain to source breakdown voltage  
Gate to source breakdown voltage  
Drain cut-off current  
VDSS  
VGSS  
IDSS  
ID=10mA,VGS=0  
V
ID= 100 A,VDS=0  
VDS=360V,VGS=0  
VGS= 25V,VDS=0  
100  
10  
A
Gate leakage current  
Gate to source cutoff voltage  
Forward transfer admittance  
Drain to source on-state resistance  
Input capacitance  
IGSS  
A
VGS(off) VDS=10V,ID=1mA  
VDS=20V,ID=1A  
2.0  
0.6  
3.0  
V
1.1  
3.5  
160  
45  
5
s
Yfs  
RDS(on) VGS=10V,ID=1A  
Ciss  
5.5  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
VDS=10V,VGS=0,f=1MHZ  
Output capacitance  
Coss  
Crss  
td(on)  
tr  
Reverse transfer capacitance  
Turn-on delay time  
5
Rise time  
10  
20  
10  
ID=1A,VGS(on)=0,RL=30  
Turn-off delay time  
td(off)  
tf  
Fall time  
1
www.kexin.com.cn  

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