2SK1151(L)

更新时间： 2024-02-13 08:56:02

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2SK1151(L) 数据手册

2SK1151(L)(S), 2SK1152(L)(S)

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Drain to source

breakdown voltage

2SK1151 V_(BR)DSS450

—

I_D= 10 mA, V_GS= 0

2SK1152

500

Gate to source breakdown

voltage

V_(BR)GSS±30

—

I_G= ±100 µA, V_DS= 0

Gate to source leak current

I_GSS

—

±10

µA

V_GS= ±25 V, V_DS= 0

V_DS= 360 V, V_GS= 0

V_DS= 400 V, V_GS= 0

I_D= 1 mA, V_DS= 10 V

I_D= 1 A, V_GS= 10 V *¹

Zero gate voltage

drain current

2SK1151 I_DSS

2SK1152

100

Gate to source cutoff voltage

Static Drain to source 2SK1151 R_DS(on)

on stateresistance 2SK1152

V_GS(off)

2.0

—

0.6

—

3.0

5.5

6.0

—

3.5

4.0

1.1

160

Ω

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

|yfs|

Ciss

Coss

Crss

t_d(on)

t_r

I_D= 1 A, V_DS= 20 V *¹

V_DS= 10 V, V_GS= 0,

f = 1 MHz

I_D= 1 A, V_GS= 10 V,

1.0

R_L= 30 Ω

Turn-off delay time

Fall time

t_d(off)

t_f

Body to drain diode forward

voltage

V_DF

I_F= 1.5 A, V_GS= 0

Body to drain diode reverse

recovery time

t_rr

—

220

—

I_F= 1.5 A, V_GS= 0,

di_F/dt = 100 A/µs

Note: 1. Pulse test

1 234 5 6 7...9

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