Datasheet > 2SK1151_11

2SK1151_11

更新时间： 2022-09-18 11:42:17

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
7页	120K
描述
Silicon N Channel MOS FET

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2SK1151_11 数据手册

Preliminary Datasheet

2SK1151(L), 2SK1151(S),

2SK1152(L), 2SK1152(S)

Silicon N Channel MOS FET

R07DS0397EJ0300

(Previous: REJ03G0907-0200)

Rev.3.00

May 16, 2011

Application

High speed power switching

Features

•

Low on-resistance

High speed switching

Low drive current

No secondary breakdown

Suitable for switching regulator and DC-DC converter

Outline

RENESAS Package code: PRSS0004ZD-A

(Package name: DPAK(L)-(1))

RENESAS Package code: PRSS0004ZD-C

(Package name: DPAK(S))

1. Gate

2. Drain

3. Source

4. Drain

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

450

500

±30

1.5

Unit

Drain to source voltage

2SK1151

2SK1152

V_DSS

Gate to source voltage

Drain current

V_GSS

I_D

Drain peak current

I_D(pulse)

Body to drain diode reverse drain current

Channel dissipation

I_DR

1.5

Pch*²

Tch

°C

Channel temperature

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%

2. Value at T_C= 25°C

R07DS0397EJ0300 Rev.3.00

May 16, 2011

Page 1 of 6

12 3 4 5 6 7

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