Datasheet > 2SK1062_07

2SK1062_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	587K
描述
Silicon N Channel MOS Type High Speed Switching Applications

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数据手册

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2SK1062_07 数据手册

2SK1062

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate leakage current

Symbol

Test Condition

Min

Typ.

Max

Unit

= ±10 V, V

= 0

⎯

±100

μA

GSS

Drain cut-off current

= 60 V, V

= 0

DSS

(BR) DSS

= 0

Drain-source breakdown voltage

Gate threshold voltage

Forward transfer admittance

Drain-source ON resistance

Drain-source ON voltage

Input capacitance

= 1 mA, V

⎯

= 10 V, I = 1 mA

⎯

3.5

⎯

⎪Y ⎪

= 10 V, I = 50 mA

100

⎯

= 50 mA, V

= 10 V

0.6

1.0

DS (ON)

= 50 mA, V

= 10 V

= 10 V, V

= 0, f = 1 MHz

iss

rss

oss

Reverse transfer capacitance

Output capacitance

Rise time

⎯

Turn-on time

Switching time

Fall time

: t , t < 5 ns

Turn-off Time

⎯

off

D.U 1% (Z

out

= 50 Ω)

Note: This transistor is the electrostatic sensitive device. Please handle with caution.

2007-11-01

123 4 5

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