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2SK1067-5 PDF预览

2SK1067-5

更新时间： 2024-11-26 20:30:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 144K
描述
TRANSISTOR,MOSFET,N-CHANNEL,16V V(BR)DSS,30MA I(D),SOT-23VAR

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中文翻译

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2SK1067-5 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：compliant风险等级：5.84
Is Samacsys：N配置：Single
最大漏极电流 (Abs) (ID)：0.03 AFET 技术：METAL-OXIDE SEMICONDUCTOR
工作模式：ENHANCEMENT MODE最高工作温度：125 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.15 W
子类别：FET General Purpose Power表面贴装：YES
Base Number Matches：1

2SK1067-5 数据手册

 浏览型号2SK1067-5的Datasheet PDF文件第2页浏览型号2SK1067-5的Datasheet PDF文件第3页浏览型号2SK1067-5的Datasheet PDF文件第4页浏览型号2SK1067-5的Datasheet PDF文件第5页 
Ordering number:EN2719  
N-Channel Silicon MOSFET  
2SK1067  
FM Tuner, VHF-Band Amplifier Applications  
Features  
Package Dimensions  
unit:mm  
· Low noise NF=1.8dB typ (f=100MHz).  
· High power gain PG=27dB typ (f=100MHz).  
· Small reverse transfer capacitance Crss=0.035pF  
2057  
[2SK1067]  
(V =10V, f=1MHz).  
DS  
· Ultrasmall-sized package (MCP) permitting  
2SK1067-applied sets to be made smaller and  
slimmer.  
0.3  
0.15  
3
2
0 to 0.1  
0.6  
1
0.3  
0.65 0.65  
2.0  
0.9  
1 : Gate  
2 : Drain  
3 : Source  
SANYO : MCP  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
16  
±5  
DS  
Gate-to-Source Voltage  
Drain Current  
V
V
GS  
I
30  
mA  
mW  
˚C  
D
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
P
D
Tch  
150  
125  
Tstg  
–55 to +125  
˚C  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Drain-to-Source Voltage  
V
I
V
V
V
V
V
V
V
=–4V, I =100µA  
D
=0V, V =±5V  
GS  
=10V, V =0  
GS  
=10V, I =100µA  
D
=10V, V =0, f=1kHz  
GS  
=10V, V =0, f=1MHz  
GS  
=10V, V =0, f=1MHz  
GS  
16  
V
nA  
mA  
V
DSX  
GS  
DS  
DS  
DS  
DS  
DS  
DS  
Gate-to-Source Leakage Current  
Zero-Gate Voltage Drain Current  
Cutoff Voltage  
10  
GSS  
I
1.2*  
12.0*  
–2.5  
DSS  
V
GS(off)  
| yfs |  
Forward Transfer Admittance  
Input Capacitance  
11  
mS  
pF  
pF  
Ciss  
Crss  
2.3  
Reverse Transfer Capacitance  
0.035  
* : The 2SK1067 is classified by I  
as follows (unit : mA) :  
Continued on next page.  
DSS  
1.2  
(Note) Marking : CJ  
rank : 3, 4, 5  
3
3.0 2.5  
4
6.0 5.0  
5
12.0  
I
DSS  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
51099TH (KT)/N158MO, TS No.2719–1/5  
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