生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.29 |
配置: | SINGLE | 最小漏源击穿电压: | 16 V |
最大漏极电流 (ID): | 0.03 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SK1067(CJ)TL | ONSEMI | Small Signal Field-Effect Transistor, 0.03A I(D), 16V, 1-Element, N-Channel, Silicon, Meta |
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2SK1067-3 | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 16V V(BR)DSS | 30MA I(D) | SOT-23VAR |
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2SK1067-4 | ONSEMI | TRANSISTOR,MOSFET,N-CHANNEL,16V V(BR)DSS,30MA I(D),SOT-23VAR |
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2SK1067-5 | ONSEMI | TRANSISTOR,MOSFET,N-CHANNEL,16V V(BR)DSS,30MA I(D),SOT-23VAR |
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2SK1067M | ETC | MOSFETs |
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2SK1068 | SANYO | Impedance Conversion Applications |
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