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2SK1070_11 PDF预览

2SK1070_11

更新时间: 2024-11-26 07:20:19
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
6页 87K
描述
Silicon N-Channel Junction FET

2SK1070_11 数据手册

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Preliminary Datasheet  
R07DS0282EJ0300  
(Previous: REJ03G0574-0200)  
Rev.3.00  
2SK1070  
Silicon N-Channel Junction FET  
Mar 28, 2011  
Application  
Low frequency / High frequency amplifier  
Outline  
RENESAS Package code: PLSP0003ZB-A  
(Package name: MPAK)  
3
1
1. Drain  
2. Source  
3. Gate  
2
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Gate to drain voltage  
Gate to source voltage  
Drain current  
Symbol  
VGDO  
VGSO  
ID  
Ratings  
–22  
Unit  
V
–22  
V
50  
mA  
mA  
mW  
°C  
Gate current  
IG  
10  
Channel power dissipation  
Channel temperature  
Storage temperature  
Pch  
Tch  
150  
150  
Tstg  
–55 to +150  
°C  
R07DS0282EJ0300 Rev.3.00  
Mar 28, 2011  
Page 1 of 4  

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