Datasheet > 2SK1070_11

2SK1070_11

更新时间： 2022-09-18 11:41:29

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
6页	87K
描述
Silicon N-Channel Junction FET

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2SK1070_11 数据手册

Preliminary Datasheet

R07DS0282EJ0300

(Previous: REJ03G0574-0200)

Rev.3.00

2SK1070

Silicon N-Channel Junction FET

Mar 28, 2011

Application



Low frequency / High frequency amplifier

Outline

RENESAS Package code: PLSP0003ZB-A

(Package name: MPAK)

1. Drain

2. Source

3. Gate

Absolute Maximum Ratings

(Ta = 25°C)

Item

Gate to drain voltage

Gate to source voltage

Drain current

Symbol

V_GDO

V_GSO

I_D

Ratings

–22

Unit

–22

°C

Gate current

I_G

Channel power dissipation

Channel temperature

Storage temperature

Pch

Tch

150

Tstg

–55 to +150

°C

R07DS0282EJ0300 Rev.3.00

Mar 28, 2011

Page 1 of 4

12 3 4 5 6

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2SK1070B	ETC	TRANSISTOR \| JFET \| N-CHANNEL \| 6MA I(DSS) \| SOT-346	获取价格
2SK1070-B	RENESAS	暂无描述	获取价格
2SK1070-B	HITACHI	暂无描述	获取价格
2SK1070C	ETC	TRANSISTOR \| JFET \| N-CHANNEL \| 12MA I(DSS) \| SOT-346	获取价格
2SK1070-C	HITACHI	Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction	获取价格
2SK1070D	ETC	TRANSISTOR \| JFET \| N-CHANNEL \| 18MA I(DSS) \| SOT-346	获取价格