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2SJ556

更新时间： 2024-01-03 19:57:05

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2SJ556 技术参数

2SJ556

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including intellectual property rights, in connection with use of the information contained in this

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2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially

high quality and reliability or where its failure or malfunction may directly threaten human life or

cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control,

transportation, traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi

particularly for maximum rating, operating supply voltage range, heat radiation characteristics,

installation conditions and other characteristics. Hitachi bears no responsibility for failure or

damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider

normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic

measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause

bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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without written approval from Hitachi.

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型号	品牌	描述	获取价格	数据表
2SJ557	NEC	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING	获取价格
2SJ557	TYSEMI	switching device	获取价格
2SJ557	RENESAS	2500mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-96, 3 PIN	获取价格
2SJ557(0)-T1B-AT	RENESAS	Switching P-Channel Power MOSFET, TMM, /Embossed Tape	获取价格
2SJ557A	NEC	Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal	获取价格
2SJ557-A	NEC	暂无描述	获取价格