5秒后页面跳转
2SJ529 PDF预览

2SJ529

更新时间: 2024-02-18 15:21:21
品牌 Logo 应用领域
日立 - HITACHI 开关电源开关
页数 文件大小 规格书
9页 55K
描述
Silicon P Channel MOS FET High Speed Power Switching

2SJ529 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
零件包装代码:DPAK(S)针数:4
Reach Compliance Code:compliant风险等级:5.65
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

2SJ529 数据手册

 浏览型号2SJ529的Datasheet PDF文件第1页浏览型号2SJ529的Datasheet PDF文件第2页浏览型号2SJ529的Datasheet PDF文件第4页浏览型号2SJ529的Datasheet PDF文件第5页浏览型号2SJ529的Datasheet PDF文件第6页浏览型号2SJ529的Datasheet PDF文件第7页 
2SJ529(L),2SJ529(S)  
Main Characteristics  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
–100  
–50  
40  
30  
20  
10  
–20  
–10  
–5  
–2  
–1  
Operation in  
this area is  
limited by R  
–0.5  
DS(on)  
–0.2  
–0.1  
Ta = 25 °C  
–1 –3  
Drain to Source Voltage  
0
50  
100  
150  
200  
–0.1 –0.3  
–10 –30 –100  
(V)  
V
DS  
Case Temperature Tc (°C)  
Typical Transfer Characteristics  
= –10 V  
Typical Output Characteristics  
–10 V  
–10  
–8  
–6  
–4  
–2  
–10  
–8  
–6  
–4  
–2  
V
DS  
–3.5 V  
–5 V  
Pulse Test  
–4 V  
Pulse Test  
–3 V  
Tc = 75 °C  
25 °C  
–25 °C  
–4  
–2.5 V  
= –2 V  
–8  
V
GS  
0
–1  
–2  
–3  
–5  
0
–2  
–4  
–6  
–10  
(V)  
Gate to Source Voltage  
V
(V)  
GS  
Drain to Source Voltage  
V
DS  
3

与2SJ529相关器件

型号 品牌 描述 获取价格 数据表
2SJ529(L) ETC TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-251AA

获取价格

2SJ529(L)-(2) RENESAS TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,10A I(D),TO-251

获取价格

2SJ529(L)|2SJ529(S) ETC

获取价格

2SJ529(S) ETC TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-252AA

获取价格

2SJ529(S)-(2) RENESAS TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,10A I(D),TO-252AA

获取价格

2SJ529(S)-(3) RENESAS TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,10A I(D),TO-252AA

获取价格