5秒后页面跳转
2SJ529S PDF预览

2SJ529S

更新时间: 2024-02-10 01:59:47
品牌 Logo 应用领域
科信 - KEXIN 晶体开关晶体管脉冲电源开关
页数 文件大小 规格书
1页 45K
描述
Hight Speed Power Switching

2SJ529S 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
零件包装代码:DPAK(S)针数:4
Reach Compliance Code:compliant风险等级:5.65
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

2SJ529S 数据手册

  
SMD Type  
MOSFET  
Hight Speed Power Switching  
2SJ527S  
TO-252  
Unit: mm  
Features  
+0.15  
6.50  
-0.15  
+0.1  
2.30  
-0.1  
+0.2  
5.30  
-0.2  
+0.8  
0.50  
-0.7  
Low on-resistance  
RDS(on) = 0.3 typ.  
Low drive current  
High speed switching  
4V gate drive devices.  
0.127  
max  
+0.1  
0.80  
-0.1  
1 Gate  
+0.1  
0.60  
-0.1  
2.3  
4.60  
2 Drain  
3 Source  
+0.15  
-0.15  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to source voltage  
Gate to source voltage  
Drain current (DC)  
Symbol  
VDSS  
VGSS  
ID  
Rating  
Unit  
V
-60  
V
20  
-5  
-20  
A
Drain current(pulse) *  
Power dissipation  
ID  
A
PD  
20  
W
Channel temperature  
Storage temperature  
Tch  
150  
Tstg  
-55 to +150  
* PW 10 s, duty cycle  
1 %  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
ID=-10mA,VGS=0  
Min  
-60  
Typ  
Max  
Unit  
V
Drain to source breakdown voltage  
Gate to source breakdown voltage  
Drain cut-off current  
VDSS  
VGSS  
IDSS  
V
IG= 100 A ,VDS=0  
VDS=-60V,VGS=0  
20  
-10  
10  
A
Gate leakage current  
IGSS  
VGS= 16V,VDS=0  
A
Gate to source cutoff voltage  
Forward transfer admittance  
VGS(off) VDS=-10V,ID=-1mA  
-1.0  
1.8  
-2.0  
V
VDS=-10V,ID=-3A  
VGS=-10V,ID=-3A  
VGS=-4.0V,ID=-3A  
3
S
Yfs  
0.3  
0.5  
220  
110  
35  
0.4  
0.8  
Drain to source on-state resistance  
RDS(on)  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
Ciss  
Coss  
Crss  
td(on)  
tr  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
VDS=-10V,VGS=0,f=1MHZ  
10  
30  
VGS(on)=-10V,ID=--3A ,RL=10  
Turn-off delay time  
Fall time  
td(off)  
tf  
45  
35  
1
www.kexin.com.cn  

与2SJ529S相关器件

型号 品牌 描述 获取价格 数据表
2SJ529S-E RENESAS 10A, 60V, 0.24ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3

获取价格

2SJ529STL-E RENESAS Silicon P Channel MOS FET

获取价格

2SJ529STR-E RENESAS Pch Single Power MOSFET -60V -10A 160mohm DPAK(S)/TO-252

获取价格

2SJ530 HITACHI Silicon P Channel MOS FET High Speed Power Switching

获取价格

2SJ530 RENESAS Silicon P Channel MOS FET

获取价格

2SJ530(L) HITACHI 暂无描述

获取价格