SMD Type
MOSFICET
Hight Speed Power Switching
2SJ527S
TO-252
Unit: mm
Features
+0.15
6.50
-0.15
+0.1
2.30
-0.1
+0.2
5.30
-0.2
+0.8
0.50
-0.7
Low on-resistance
RDS(on) = 0.3 typ.
Low drive current
High speed switching
4V gate drive devices.
0.127
max
+0.1
0.80
-0.1
1 Gate
+0.1
0.60
-0.1
2.3
4.60
2 Drain
3 Source
+0.15
-0.15
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Symbol
VDSS
VGSS
ID
Rating
Unit
V
-60
V
20
-5
-20
A
Drain current(pulse) *
Power dissipation
ID
A
PD
20
W
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s, duty cycle
1 %
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
ID=-10mA,VGS=0
Min
-60
Typ
Max
Unit
V
Drain to source breakdown voltage
Gate to source breakdown voltage
Drain cut-off current
VDSS
VGSS
IDSS
V
IG= 100 A ,VDS=0
VDS=-60V,VGS=0
20
-10
10
A
Gate leakage current
IGSS
VGS= 16V,VDS=0
A
Gate to source cutoff voltage
Forward transfer admittance
VGS(off) VDS=-10V,ID=-1mA
-1.0
1.8
-2.0
V
VDS=-10V,ID=-3A
VGS=-10V,ID=-3A
VGS=-4.0V,ID=-3A
3
S
Yfs
0.3
0.5
220
110
35
0.4
0.8
Drain to source on-state resistance
RDS(on)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
td(on)
tr
pF
pF
pF
ns
ns
ns
ns
VDS=-10V,VGS=0,f=1MHZ
10
30
VGS(on)=-10V,ID=--3A ,RL=10
Turn-off delay time
Fall time
td(off)
tf
45
35
1
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