Datasheet > 2SJ530(L)|2SJ530(S)

2SJ530(L)|2SJ530(S)

更新时间： 2022-01-19 12:39:00

阅读下载

获取价格

如果您发现信息不准确，欢迎纠错

2SJ530(L)|2SJ530(S) 数据手册

2SJ530(L), 2SJ530(S)

Silicon P Channel MOS FET

High Speed Power Switching

ADE-208-655C (Z)

4th. Edition

Mar. 2001

Features

•

Low on-resistance

R_DS(on)= 0.08Ω typ.

4V gate drive devices.

High speed switching.

•

Outline

DPAK–2

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6 7...11

下载PDF

型号	品牌	描述	获取价格	数据表
2SJ530(S)	RENESAS	0.16ohm, POWER, FET, DPAK-3	获取价格
2SJ530(S)-(1)	RENESAS	TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,15A I(D),TO-252VAR	获取价格
2SJ530(S)-(2)	RENESAS	TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,15A I(D),TO-252VAR	获取价格
2SJ530(S)-(3)	RENESAS	Transistor	获取价格
2SJ530L	HITACHI	Silicon P Channel MOS FET High Speed Power Switching	获取价格
2SJ530L	RENESAS	Silicon P Channel MOS FET	获取价格