Datasheet > 2SJ529(L)|2SJ529(S)

2SJ529(L)|2SJ529(S)

更新时间： 2022-01-19 12:39:00

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
12页	63K
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2SJ529(L)|2SJ529(S) 数据手册

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2SJ529(L),2SJ529(S)

Body–Drain Diode Reverse

Recovery Time

Typical Capacitance vs.

Drain to Source Voltage

2000

1000

500

= 0

f = 1 MHz

200

100

Ciss

Crss

200

100

Coss

–30

di / dt = 50 A / µs

= 0, Ta = 25 °C

–0.1 –0.2 –0.5 –1 –2

–5 –10

(A)

–10

–20

–40

–50

(V)

Reverse Drain Current

Drain to Source Voltage

Dynamic Input Characteristics

Switching Characteristics

= –10 V, V = –30 V

1000

–20

–40

–60

= –10 V

–25 V

Pw = 5 µs, duty < 1 %

300

100

–50 V

–4

–8

–12

d(off)

= –10 A

d(on)

= –10 V

–25 V

–80

–16

–20

–50 V

–100

–0.1 –0.2

–0.5 –1 –2

–5

–10

Gate Charge Qg (nc)

Drain Current

(A)

1...3 4 567 8 9...12

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