是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 2 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 20 W |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ326-Z-T1 | RENESAS |
获取价格 |
2SJ326-Z-T1 | |
2SJ327 | NEC |
获取价格 |
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE | |
2SJ327(JM) | RENESAS |
获取价格 |
2SJ327(JM) | |
2SJ327-AY | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,4A I(D),TO-251VAR | |
2SJ327-Z | NEC |
获取价格 |
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE | |
2SJ327-Z-AZ | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 4A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-o | |
2SJ327-Z-E1 | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,4A I(D),TO-252VAR | |
2SJ327-Z-E1 | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 4A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-o | |
2SJ327-Z-E2 | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 4A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-o | |
2SJ327-Z-E2-AY | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,4A I(D),TO-252VAR |