Datasheet > 2SJ326-Z-E2

2SJ326-Z-E2

更新时间： 2024-02-21 08:19:00

品牌	Logo	应用领域
瑞萨 - RENESAS		开关晶体管
页数	文件大小	规格书
8页	1854K
描述
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,2A I(D),TO-252

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2SJ326-Z-E2 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	2 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	20 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

2SJ326-Z-E2 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ326,326-Z

SWITCHING

P-CHANNEL POWER MOS FET

DESCRIPTION

PACKAGE DRAWINGS (Unit: mm)

The 2SJ326 is P-channel MOS Field Effect Transistor designed for

solenoid, motor and lamp driver.

2.3 ±0.2

0.5 ±0.1

6.5 ±0.2

5.0 ±0.2

FEATURES

• Low On-state Resistance

R^DS(on)= 0.28 Ω TYP. (VGS = −10 V, ID = −1.0 A)

R^DS(on)= 0.50 Ω TYP. (VGS = −4 V, ID = −0.8 A)

• Low C^iss: Ciss = 320 pF TYP.

1.1 ±0.2

• Built-in G-S Gate Protection Diode

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

0.5 ⁺−0⁰.^.1²

0.5 ⁺−⁰0^..²1

2.3 2.3

Drain to Source Voltage

VDSS

V^GSS(AC)

V^GSS(DC)

I^D(DC)

I^D(pulse)

PT1

−60

m20

Gate to Source Voltage (AC)

Gate to Source Voltage (DC)

Drain Current (DC)

−20, +10

m2.0

<R>

TO-251 (MP-3)

Drain Current (pulse) ^Note

Total Power Dissipation (T^C= 25°C)

Total Power Dissipation (T^A= 25°C)

Channel Temperature

m8.0

6.5 ±0.2

5.0 ±0.2

4.4 ±0.2

°C

2.3 ±0.2

PT2

1.0

0.5 ±0.1

Note

T^ch

150

Storage Temperature

T^stg

−55 to +150

2 3

Note PW ≤ 10 μs, Duty Cycle ≤ 1%

0.5 ±0.1

2.3 ±0.3

0.5 ±0.1

2.3 ±0.3

EQUIVALENT CIRCUIT

0.15 ±0.15

Electrode Connection

1. Gate

2. Drain

TO-252 (MP-3Z)

3. Source

4. Drain Fin

Note The depth of notch at the top of the fin is

from 0 to 0.2 mm.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D18313EJ3V0DS00 (3rd edition)

Date Published January 2007 NS CP(K)

Printed in Japan

1993, 2006

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

1 234 5 6 7 8

中文翻译

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与2SJ326-Z-E2相关器件

型号	品牌	获取价格	描述	数据表
2SJ326-Z-T1	RENESAS	获取价格	2SJ326-Z-T1
2SJ327	NEC	获取价格	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
2SJ327(JM)	RENESAS	获取价格	2SJ327(JM)
2SJ327-AY	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,4A I(D),TO-251VAR
2SJ327-Z	NEC	获取价格	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
2SJ327-Z-AZ	NEC	获取价格	Small Signal Field-Effect Transistor, 4A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-o
2SJ327-Z-E1	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,4A I(D),TO-252VAR
2SJ327-Z-E1	NEC	获取价格	Small Signal Field-Effect Transistor, 4A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-o
2SJ327-Z-E2	NEC	获取价格	Small Signal Field-Effect Transistor, 4A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-o
2SJ327-Z-E2-AY	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,4A I(D),TO-252VAR

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