DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ210
P-CHANNEL MOSFET
FOR SWITCHING
PACKAGE DRAWING (Unit: mm)
The 2SJ210, P-channel vertical type MOSFET, is a switching
device which can be driven directly by the output of ICs having a
5 V power source.
The 2SJ210 has excellent switching characteristics and is
suitable as a high-speed switching device in digital circuits.
2.8 ±±.2
1.5
+±.1
–±.15
±.65
2
FEATURES
3
• Directly driven by the output of ICs having a 5 V power source.
• Not necessary to consider driving current because of its high
input impedance.
1
Marking
• Possible to reduce the number of parts by omitting the bias
resistor.
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ORDERING INFORMATION
1. Source
2. Gate
3. Drain
PART NUMBER
PACKAGE
2SJ210
SC-59 (Mini Mold)
Marking: H16
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
EQUIVALENT CIRCUIT
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
VDSS
VGSS
ID(DC)
ID(pulse)
PT
−60
m20
m200
m400
200
V
V
mA
mA
mW
°C
Drain
Drain Current (pulse) Note
Total Power Dissipation
Channel Temperature
Body
Diode
Gate
Tch
150
Gate
Protection
Diode
Storage Temperature
Tstg
−55 to +150
°C
Source
Note PW ≤ 10 ms, Duty Cycle ≤ 50%
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Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17906EJ3V0DS00 (3rd edition)
(Previous No. TC-2293A)
1990
Date Published February 2006 NS CP(K)
Printed in Japan
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