Datasheet > 2SJ211

2SJ211

更新时间： 2024-01-15 15:22:00

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	42K
描述
MOS Fied Effect Transistor

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技术参数
数据手册

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2SJ211 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
配置：	Single	最大漏极电流 (Abs) (ID)：	0.2 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	0.2 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

2SJ211 数据手册

SMD Type

MOSFET

MOS Fied Effect Transistor

2SJ211

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Directly driven by Ics having a 5V poer supply.

Not necessary to consider driving current because of

its high input impedance.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

Possible to reduce the number of parts by omitting the biasresistor.

1.Base

1 GATE

2.Emitter

2 SOURCE

3.collector

3 DRAIN

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage VGS=0

Gate to source voltage VDS=0

Drain current (DC)

Symbol

VDSS

VGSS

Rating

-100

Unit

m A

m W

200

Drain current(pulse) *

400

Power dissipation

200

Channel temperature

Tch

150

Storage temperature

Tstg

-55 to +150

* PW

10 ms; d

50%.

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Symbol

IDSS

Testconditons

Min

Typ

Max

-10

Unit

VDS=-100V,VGS=0

VGS= 20V,VDS=0

VDS=-5.0V,ID=-1

Gate leakage current

Gate cut-off voltage

IGSS

VGS(off)

Yfs

-1.4

-1.8

-2.4

Forward transfer admittance

VDS=-5.0V,ID=-10mA

VGS=-4.0V,ID=-10mA

VGS=-10V,ID=-10mA

Drain to source on-state resistance

RDS(on)

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Ciss

C^oss

Crss

td(on)

VDS=-5.0V,VGS=0,f=1MHZ

110

150

160

150

VGS(on)=-4V,RG=10 ,VDD=-5V,ID=-

10mA RL=500

Turn-off delay time

Fall time

td(off)

Marking

H18

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