是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 0.2 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 0.2 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ210-T1B | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,200MA I(D),SOT-346 | |
2SJ211 | KEXIN |
获取价格 |
MOS Fied Effect Transistor | |
2SJ211 | NEC |
获取价格 |
P-CHANNEL MOS FET FOR SWITCHING | |
2SJ211-A | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.2A I(D), 100V, 1-Element, P-Channel, Silicon, Meta | |
2SJ211-L-A | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,100V V(BR)DSS,200MA I(D),SOT-346 | |
2SJ211-T1B | RENESAS |
获取价格 |
2SJ211-T1B | |
2SJ211-T1B-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,100V V(BR)DSS,200MA I(D),SOT-346 | |
2SJ211-T2B | RENESAS |
获取价格 |
2SJ211-T2B | |
2SJ212 | NEC |
获取价格 |
P-CHANNEL MOS FET FOR SWITCHING | |
2SJ212 | KEXIN |
获取价格 |
MOS Fied Effect Transistor |