Datasheet > 2SD965

2SD965

更新时间： 2025-09-22 19:25:19

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描述
元器件封装:SOT-89;

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中文翻译

获取价格

数据手册

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2SD965 数据手册

2SD965

TRANSISTOR (NPN)

SOT-89

FEATURES

Low Collector-Emitter Saturation Voltage

Large Collector Power Dissipation and Current

Mini Power Type Package

1. BASE

2. COLLECTOR

3. EMITTER

: 965

MARKING

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_CM

Parameter

Collector-Base Voltage

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

7.5

Collector Current

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

750

℃/W

℃

R_θJA

T_j

167

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=100µA,I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=1mA,I_B=0

I_E=10µA,I_C=0

V_CB=10V,I_E=0

0.1

µA

Emitter cut-off current

I_EBO

V_EB=7V,I_C=0

h_FE(1)

h_FE(2)

h_FE(3)

V_CE(sat)

f_T

V_CE=2V, I_C=1mA

V_CE=2V, I_C=500mA

V_CE=2V, I_C=2A

200

150

DC current gain

340

150

1000

Collector-emitter saturation voltage

Transition frequency

I_C=3A,I_B=0.1A

VCE=6V,IC=50mA，f=200MHz

V_CB=20V, I_E=0, f=1MHz

MHz

Collector output capacitance

C_ob

REV.08

1 of 3

12 3

中文翻译

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