Datasheet > 2SD789

2SD789

更新时间： 2024-11-21 12:54:35

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管
页数	文件大小	规格书
1页	123K
描述
TRANSISTOR (NPN)

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中文翻译

获取价格

数据手册

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2SD789 数据手册

RoHS

2SD789

TRANSISTOR (NPN)

TO-92MOD

FEATURE

1. EMITTER

Power dissipation

2. COLLECTOR

3. BASE

P_CM:

0.9

W (Tamb=25℃)

Collector current

I_CM:

Collector-base voltage

V_(BR)CBO

100

123

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic= 10µA , I_E=0

I_C=1mA , I_B=0

I_E= 10µA, I_C=0

V_CB= 80V, I_E=0

V_EB=6V, I_C=0

MIN

100

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

µA

Emitter cut-off current

I_EBO

0.2

DC current gain

h_FE

V_CE=2V, I_C= 100mA

I_C= 1A, I_B=100mA

100

800

0.3

Collector-emitter saturation voltage

V_CEsat

Transition frequency

Output capacitance

V_CE=2V, I_C= 10mA

MHz

f_T

V_CE=10V, I_E=0,f=1 MHz

C_ob

CLASSIFICATION OF h_FE

Rank

WEJ ELECTRONIC CO.,LTD

Range

100-200

160-320

250-500

400-800

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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2SD789C	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 1A I(C) \| TO-92VAR
2SD789-C	RENESAS	获取价格	暂无描述
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