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2SD669A-D-T9N-K PDF预览

2SD669A-D-T9N-K

更新时间: 2024-09-24 05:01:59
品牌 Logo 应用领域
友顺 - UTC 晶体晶体管
页数 文件大小 规格书
2页 90K
描述
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

2SD669A-D-T9N-K 技术参数

生命周期:Active零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.82最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:160 V配置:SINGLE
最小直流电流增益 (hFE):160JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):140 MHz

2SD669A-D-T9N-K 数据手册

 浏览型号2SD669A-D-T9N-K的Datasheet PDF文件第2页 
Transys  
Electronics  
L
I M I T E D  
TO-126C Plastic-Encapsulated Transistors  
2SD669 TRANSISTOR (NPN)  
TO-126C  
FEATURES  
Power dissipation  
PCM:  
1
W (Tamb=25)  
1. EMITTER  
2. COLLECTOR  
3. BASE  
Collector current  
ICM:  
1.5  
A
V
1 2 3  
Collector-base voltage  
V(BR)CBO 180  
:
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=1mA, IE=0  
MIN  
180  
120  
5
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
Ic=10mA, IB=0  
IE=1mA, IC=0  
V
µA  
µA  
VCB=160V, IE=0  
VEB=4V, IC=0  
10  
10  
IEBO  
Emitter cut-off current  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE  
V
CE=5V, IC=150mA  
60  
30  
320  
DC current gain  
VCE=5V, IC=500mA  
IC=500mA, IB=50mA  
V
V
Collector-emitter saturation voltage  
Base-emitter voltage  
1
VCE=5V, IC=150mA  
1.5  
MHz  
pF  
Transition frequency  
fT  
VCE=5V, IC=150mA  
140  
14  
Cob  
Collector output capacitance  
V
CB=10V, IE=0, f=1MHz  
CLASSIFICATION OF hFE(1)  
Rank  
B
C
D
160-320  
Range  
60-120  
100-200  

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