Datasheet > 2SD2481_06

2SD2481_06

更新时间： 2024-11-01 07:31:43

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器脉冲
页数	文件大小	规格书
5页	144K
描述
Pulse Motor Drive, Hammer Drive Applications

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SD2481_06 数据手册

2SD2481

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SD2481

Pulse Motor Drive, Hammer Drive Applications

Unit: mm

Switching Applications

Power Amplifier Applications

•

High DC current gain: h

= 4000 (min) (V

= 2 V, I = 150 mA)

CE C

Low saturation voltage: V

= 1.5 V (max) (I = 1 A, I = 1 mA)

C B

CE (sat)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

1.5

0.15

1.3

150

Base current

Collector power dissipation

Junction temperature

Storage temperature range

°C

JEDEC

JEITA

―

stg

−55 to 150

TOSHIBA

2-8M1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 0.55 g (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Equivalent Circuit

COLLECTOR

BASE

EMITTER

2006-11-21

12 3 4 5

中文翻译

下载PDF

与2SD2481_06相关器件

型号	品牌	获取价格	描述	数据表
2SD2482	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon
2SD2483	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
2SD2484	ETC	获取价格
2SD2484RR	HITACHI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SD2484TZ	HITACHI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SD2485	ETC	获取价格
2SD2486	PANASONIC	获取价格	Silicon NPN triple diffusion planar type(For power amplification with high forward current
2SD2486Q	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 4A I(C) \| TO-220FP
2SD2486R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 4A I(C) \| TO-220FP
2SD2488	ISC	获取价格	Silicon NPN Power Transistors