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2SD2403-GZ-AZ PDF预览

2SD2403-GZ-AZ

更新时间: 2024-11-17 05:27:03
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
6页 137K
描述
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

2SD2403-GZ-AZ 数据手册

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DATA SHEET  
SILICON TRANSISTOR  
2SD2403  
NPN SILICON EPITAXIAL TRANSISTOR  
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING  
PACKAGE DRAWING (UNIT: mm)  
The 2SD2403 is  
a transistor featuring high current  
capacitance in small dimension. This transistor is ideal for  
DC/DC converters and motor drivers.  
FEATURES  
• High current capacitance  
• Low collector saturation voltage  
• Complementary transistor with 2SB1572  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Symbol  
VCBO  
Conditions  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (pulse)  
80  
60  
VCEO  
V
6.0  
3.0  
VEBO  
V
IC(DC)  
A
PW 10 ms  
IC(pulse)  
5.0  
A
duty cycle 50 %  
Base current (DC)  
IB(DC)  
0.2  
0.4  
A
A
PW 10 ms  
Base current (pulse)  
IB(pulse)  
duty cycle 50 %  
16 cm2 × 0.7 mm ceramic board mounted  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
Tj  
2.0  
150  
W
°C  
°C  
55 to +150  
Tstg  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D16156EJ2V0DS00 (2nd edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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