Datasheet > 2SD2413

2SD2413

更新时间： 2023-12-06 20:11:07

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	729K
描述
双极型晶体管

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SD2413 数据手册

2SD2413

SOT-89 Transistor(NPN)

1. ^BASE

2. ^COLLECTOR

SOT-89

4.6

4.4

3. ^EMITTER

1.6

1.4

1.8

1.4

2.6

4.25

Features

2.4

3.75

High collector to base voltage V_CBO

High collector to emitter voltage V_CEO

Large collector power dissipation P_C

0.8

MIN

0.53

0.40

0.48

2x)

0.35

1.5

0.44

0.37

0.13

3.0

Low collector to emitter saturation voltage V_CE(sat)

Dimensions in inches and (millimeters)

Marking:1S

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

400

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

400

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

100

℃

P_C

500

T_J

150

T_stg

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

400

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=100μA, I_E=0

V_(BR)CEOI_C=0.5mA, I_B=0

V_(BR)EBOI_E=100μA, I_C=0

I_CBO

I_EBO

V_CB=400V, I_E=0

V_EB=5V, I_C=0

μA

Emitter cut-off current

DC current gain

h_FE

V_CE=5V, I_C=30mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

I_C=50mA, I_B=5mA

1.5

I_C=50mA, I_B=5mA

V_CE=30V, I_C=20mA, f=200MHz

V_CB= 30V, I_E=0, f=1MHz

MHz

Collector output capacitance

C_ob

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

下载PDF

与2SD2413相关器件

型号	品牌	描述	获取价格	数据表
2SD2413G	PANASONIC	Small Signal Bipolar Transistor, 0.1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, ROHS C	获取价格
2SD2413R	Galaxy Microelectronics	400V,0.1A,General Purpose NPN Bipolar Transistor	获取价格
2SD2414	KEXIN	Silicon NPN Triple Diffused Type	获取价格
2SD2414	TOSHIBA	NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING, POWER AMPLIFIER APPLICATIONS)	获取价格
2SD2414	TYSEMI	Low Saturation Voltage:VCE(sat)=0.5V(Max.)(at IC=4A)	获取价格
2SD2414(SM)	ETC	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 7A I(C) \| TO-263AB	获取价格