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2SD1957/EF PDF预览

2SD1957/EF

更新时间: 2024-11-19 08:19:51
品牌 Logo 应用领域
罗姆 - ROHM 局域网开关晶体管
页数 文件大小 规格书
2页 110K
描述
Power Bipolar Transistor, 7A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN

2SD1957/EF 技术参数

生命周期:Obsolete零件包装代码:TO-220FP
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.84
外壳连接:ISOLATED最大集电极电流 (IC):7 A
集电极-发射极最大电压:120 V配置:SINGLE
最小直流电流增益 (hFE):100JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
功耗环境最大值:30 W认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):40 MHz
VCEsat-Max:1 V

2SD1957/EF 数据手册

 浏览型号2SD1957/EF的Datasheet PDF文件第2页 

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Power Bipolar Transistor, 7A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
2SD1957C7/FG ROHM

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暂无描述
2SD1957C7/G ROHM

获取价格

Power Bipolar Transistor, 7A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast