Datasheet > 2SD1895_15

2SD1895_15

更新时间： 2024-11-08 01:20:19

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	98K
描述
Silicon NPN Darlington Power Transistors

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中文翻译

获取价格

数据手册

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2SD1895_15 数据手册

Product Specification

www.jmnic.com

Silicon NPN Darlington Power Transistors

2SD1895

DESCRIPTION

·With TO-3PFa package

·Optimum for 90W HiFi output

·High foward current transfer ratio h_FE

·Low collector-emitter saturation voltage

·Complement to type 2SB1255

APPLICATIONS

·Power amplification

PINNING

DESCRIPTION

Base

Collector

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

160

140

UNIT

Open base

Open collector

I_CP

Collector current-peak

T_C=25℃

100

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

JMnic

12 3

中文翻译

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与2SD1895_15相关器件

型号	品牌	获取价格	描述	数据表
2SD1895_2015	JMNIC	获取价格	Silicon NPN Darlington Power Transistors
2SD1895P	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 140V V(BR)CEO \| 8A I(C) \| TO-247VAR
2SD1895Q	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 140V V(BR)CEO \| 8A I(C) \| TO-247VAR
2SD1896	ROHM	获取价格	TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
2SD1896/B	ROHM	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
2SD1896/BC	ROHM	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
2SD1896/C	ROHM	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
2SD1896/CD	ROHM	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
2SD1896/D	ROHM	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
2SD1896/DE	ROHM	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast