JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251/TO-252-2L Plastic-Encapsulate Transistors
TO-251
2SD1815 TRANSISTOR (NPN)
TO-252-2L
FEATURES
z
z
z
z
Low collector-to-emitter saturation voltage
1. BASE
1
Excllent linearity of hFE
High fT
2
2. COLLECTOR
3. EMITTER
3
Fast switching time
MAXIMUM RATINGS (Ta=25 unless otherwise note)
℃
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
Units
V
120
100
V
6
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
3
A
PC
1
W
℃
℃
TJ
150
Storage Temperature
-55 to +150
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
120
100
6
Typ
Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=10μA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=10μA, IC=0
V
V
V
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
VCB=100V, IE=0
VEB=4V, IC=0
1
1
μA
μA
Emitter cut-off current
VCE=5V, IC=500mA
VCE=5V, IC=2A
70
40
400
DC current gain
Collector-emitter saturation voltage
Base -emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
IC=1.5A, IB=150mA
IC=1.5A, IB=150mA
VCE=10V, IC=500mA
VCB=10V, IE=0, f=1MHz
0.4
1.2
V
V
180
25
MHz
pF
nS
nS
nS
Cob
100
900
50
ton
Storage time
tS
V
CC=50V,IC=1.5A, IB1=-IB2=-0.15A
Fall time
tf
CLASSIFICATION OF hFE(1)
Rank
Q
R
S
T
Range
70-140
100-200
140-280
200-400
A,Feb,2011