Datasheet > 2SD1815R(TO-251)

2SD1815R(TO-251)

更新时间： 2024-11-17 09:54:19

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
2页	1371K
描述
Transistor

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2SD1815R(TO-251) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-251/TO-252-2L Plastic-Encapsulate Transistors

TO-251

2SD1815 TRANSISTOR (NPN)

TO-252-2L

FEATURES

Low collector-to-emitter saturation voltage

1. BASE

Excllent linearity of h_FE

High f_T

2. COLLECTOR

3. EMITTER

Fast switching time

MAXIMUM RATINGS (T^a=25 unless otherwise note)

℃

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Units

120

100

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

P_C

℃

T_J

150

Storage Temperature

-55 to +150

T_stg

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

120

100

Typ

Max Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=10μA, I_E=0

V_(BR)CEOI_C=1mA, I_B=0

V_(BR)EBOI_E=10μA, I_C=0

I_CBO

I_EBO

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

V_CB=100V, I_E=0

V_EB=4V, I_C=0

μA

Emitter cut-off current

V_CE=5V, I_C=500mA

V_CE=5V, I_C=2A

400

DC current gain

Collector-emitter saturation voltage

Base -emitter saturation voltage

Transition frequency

Collector output capacitance

Turn-on time

I_C=1.5A, I_B=150mA

V_CE=10V, I_C=500mA

V_CB=10V, I_E=0, f=1MHz

0.4

1.2

180

MHz

C_ob

100

900

t_on

Storage time

t_S

_CC=50V,I_C=1.5A, I_B1=-I_B2=-0.15A

Fall time

t_f

CLASSIFICATION OF h_FE(1)

Rank

Range

70-140

100-200

140-280

200-400

A,Feb,2011

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