SMD Type
Transistors
NPN Transistors
2SD1815
TO-252
Unit: mm
+0.15
-0.15
6.50
+0.1
-0.1
2.30
+0.8
-0.7
+0.2
5.30
-0.2
0.50
■ Features
● Low Collector-to-Emitter Saturation Voltage
● Fast Switching Speed
0.127
max
+0.1
-0.1
● High fT.
0.80
● Complementary to 2SB1215
0.1
0.1
0.60+-
1 Base
2.3
4.60
+0.15
-0.15
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
Unit
VCBO
VCEO
VEBO
120
100
6
V
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
I
C
3
A
P
C
1
W
T
J
150
℃
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
120
100
6
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100 μA, I
Ic= 1 mA, I = 0
= 100μA, I = 0
CB= 100 V , I = 0
EB= 5V , I =0
E= 0
B
I
E
C
I
CBO
EBO
V
V
E
1
uA
V
I
C
1
Collector-emitter saturation voltage
Base - emitter saturation voltage
V
CE(sat)
BE(sat)
I
I
C
=1.5 A, I
B=150mA
0.4
1.2
400
V
C
=1.5 A, I
B=150mA
h
FE(1)
FE(2)
V
V
CE= 5V, I
CE= 5V, I
C
= 500mA
70
40
DC current gain
h
C= 2 A
Turn-on time
t
on
100
900
50
V
CC=50V,IC=1.5A, IB1=-IB2=-0.15A
ns
Storage Time
t
stg
Fall Time
t
f
Collector output capacitance
Transition frequency
C
ob
T
V
V
CB= 10V, I
CE= 10V, I
E
= 0,f=1MHz
25
pF
f
C
= 500 mA
180
MHz
■ Classification of hfe(1)
Type
2SD1815-Q
70-140
2SD1815-R
100-200
2SD1815-S
140-280
2SD1815-T
200-400
Range
1
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