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2SD1815-S

更新时间: 2024-11-17 01:06:03
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描述
NPN Transistors

2SD1815-S 数据手册

  
SMD Type  
Transistors  
NPN Transistors  
2SD1815  
TO-252  
Unit: mm  
+0.15  
-0.15  
6.50  
+0.1  
-0.1  
2.30  
+0.8  
-0.7  
+0.2  
5.30  
-0.2  
0.50  
Features  
Low Collector-to-Emitter Saturation Voltage  
Fast Switching Speed  
0.127  
max  
+0.1  
-0.1  
High fT.  
0.80  
Complementary to 2SB1215  
0.1  
0.1  
0.60+-  
1 Base  
2.3  
4.60  
+0.15  
-0.15  
2 Collector  
3 Emitter  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
Rating  
Unit  
VCBO  
VCEO  
VEBO  
120  
100  
6
V
Collector Current - Continuous  
Collector Power Dissipation  
Junction Temperature  
I
C
3
A
P
C
1
W
T
J
150  
Storage Temperature Range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
120  
100  
6
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
Ic= 100 μAI  
Ic= 1 mAI = 0  
= 100μAI = 0  
CB= 100 V , I = 0  
EB= 5V , I =0  
E= 0  
B
I
E
C
I
CBO  
EBO  
V
V
E
1
uA  
V
I
C
1
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
V
CE(sat)  
BE(sat)  
I
I
C
=1.5 A, I  
B=150mA  
0.4  
1.2  
400  
V
C
=1.5 A, I  
B=150mA  
h
FE(1)  
FE(2)  
V
V
CE= 5V, I  
CE= 5V, I  
C
= 500mA  
70  
40  
DC current gain  
h
C= 2 A  
Turn-on time  
t
on  
100  
900  
50  
V
CC=50V,IC=1.5A, IB1=-IB2=-0.15A  
ns  
Storage Time  
t
stg  
Fall Time  
t
f
Collector output capacitance  
Transition frequency  
C
ob  
T
V
V
CB= 10V, I  
CE= 10V, I  
E
= 0,f=1MHz  
25  
pF  
f
C
= 500 mA  
180  
MHz  
Classification of hfe(1)  
Type  
2SD1815-Q  
70-140  
2SD1815-R  
100-200  
2SD1815-S  
140-280  
2SD1815-T  
200-400  
Range  
1
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