Datasheet > 2SD1782_15

2SD1782_15

更新时间： 2024-11-25 01:20:51

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

2SD1782_15 数据手册

UNISONIC TECHNOLOGIES CO., LTD

2SD1782

Preliminary

NPN EPITAXIAL SILICON TRANSISTOR

POWER NPN TRANSISTOR



DESCRIPTION

The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s

advanced technology to provide customers with high collector-emitter

breakdown voltage, low collector-emitter saturation voltage and high

DC current gain, etc.



FEATURES

* High collector-emitter breakdown voltage

* Low collector-emitter saturation voltage

* High DC current gain



ORDERING INFORMATION

Pin Assignment

Ordering Number

Package

SOT-23

Packing

2SD1782G-x-AE3-R

Tape Reel

Note: Pin Assignment: B: Base C: Collector

E: Emitter



MARKING

D17G

www.unisonic.com.tw

1 of 3

QW-R206-107.b

12 3

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
2SD1782G-Q-AE3-R	UTC	获取价格	POWER NPN TRANSISTOR
2SD1782G-R-AE3-R	UTC	获取价格	POWER NPN TRANSISTOR
2SD1782G-X-AE3-R	UTC	获取价格	POWER NPN TRANSISTOR
2SD1782HE3-R	MCC	获取价格	Tape: 3K/Reel , 120K/Ctn;
2SD1782K	TYSEMI	获取价格	Low VCE(sat).VCE(sat) = 0.2V(Typ.) IC / IB= 0.5A / 50mA High VCEO, VCEO=80V.
2SD1782K	ROHM	获取价格	Power Transistor (80V, 0.5A)
2SD1782K	KEXIN	获取价格	Power Transistor
2SD1782K	FOSHAN	获取价格	SOT-23
2SD1782KFRAT146	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SC-59,
2SD1782KFRAT146Q	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SC-59,