Datasheet > 2SD1485P

2SD1485P

更新时间： 2024-11-24 23:20:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	47K
描述
TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 5A I(C) \| TO-247VAR

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中文翻译

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数据手册

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2SD1485P 数据手册

Power Transistors

2SD1485

Silicon NPN triple diffusion planar type

For high power amplification

Complementary to 2SB1054

Unit: mm

15.0±0.3

11.0±0.2

5.0±0.2

Features

3.2

■

●

Extremely satisfactory linearity of the forward current transfer

ratio h_FE

φ3.2±0.1

2.0±0.2

●

Wide area of safe operation (ASO)

High transition frequency f_T

Full-pack package which can be installed to the heat sink with

●

2.0±0.1

0.6±0.2

one screw

1.1±0.1

Absolute Maximum Ratings (T =25˚C)

■

5.45±0.3

10.9±0.5

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

100

1:Base

2:Collector

3:Emitter

TOP–3 Full Pack Package(a)

I_C

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +155

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

I_EBO

h_FE1

Conditions

min

typ

max

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= 100V, I_E= 0

V_EB= 3V, I_C= 0

µA

V_CE= 5V, I_C= 20mA

V_CE= 5V, I_C= 1A

Forward current transfer ratio

Base to emitter voltage

h_FE2

h_FE3

V_BE

200

V_CE= 5V, I_C= 3A

1.8

Collector to emitter saturation voltage V_CE(sat)

I_C= 3A, I_B= 0.3A

Transition frequency

f_T

V_CE= 5V, I_C= 0.5A, f = 1MHz

V_CB= 10V, I_E= 0, f = 1MHz

MHz

Collector output capacitance

C_ob

^*h_FE2Rank classification

Rank

h_FE2

60 to 120

100 to 200

12 3

中文翻译

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