Datasheet > 2SD1290_2015

2SD1290_2015

更新时间： 2024-11-03 01:17:43

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	80K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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2SD1290_2015 数据手册

Product Specification

www.jmnic.com

Silicon NPN Power Transistors

2SD1290

DESCRIPTION

·With TO-3PN package

·Built-in damper diode

·High voltage ,high reliability

·Wide area of safe operation

APPLICATIONS

·For color TV horizontal deflection

output applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Fig.1 simplified outline (TO-3PN) and symbol

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_EBO

I_C

PARAMETER

Collector-base voltage

Emitter-base voltage

CONDITIONS

Open emitter

VALUE

1500

UNIT

Open collector

Collector current (DC)

Collector current (Pulse)

Collector power dissipation

Junction temperature

Storage temperature

I_CM

P_C

T_C=25℃

℃

T_j

130

-55~130

T_stg

JMnic

12 3

中文翻译

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