2SD1259

更新时间： 2024-02-28 13:07:05

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
2页	51K
描述
Silicon NPN triple diffusion planar type

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技术参数
数据手册

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2SD1259 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.84
最大集电极电流 (IC)：	3 A	集电极-发射极最大电压：	60 V
配置：	SINGLE	最小直流电流增益 (hFE)：	500
JESD-30 代码：	R-PSSO-G2	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	SINGLE
晶体管元件材料：	SILICON	VCEsat-Max：	1 V
Base Number Matches：	1

2SD1259 数据手册

Power Transistors

2SD1259, 2SD1259A

Silicon NPN triple diffusion planar type

Unit: mm

3.4±0.3

8.5±0.2

6.0±0.5

For power amplification with high forward current transfer ratio

1.0±0.1

Features

High foward current transfer ratio h_FE

■

●

1.5max.

1.1max.

0.5max.

●

Satisfactory linearity of foward current transfer ratio h_FE

N type package enabling direct soldering of the radiating fin to

●

0.8±0.1

the printed circuit board, etc. of small electronic equipment.

2.54±0.3

5.08±0.5

Absolute Maximum Ratings (T =25˚C)

1:Base

2:Collector

3:Emitter

■

Parameter

Symbol

Ratings

Unit

N Type Package

Collector to

2SD1259

2SD1259A

2SD1259

V_CBO

Unit: mm

8.5±0.2

6.0±0.3

3.4±0.3

base voltage

Collector to

100

1.0±0.1

V_CEO

emitter voltage 2SD1259A

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

I_C

R0.5

0.8±0.1

0 to 0.4

Base current

I_B

2.54±0.3

1.1 max.

5.08±0.5

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

1.3

1:Base

2:Collector

3:Emitter

Junction temperature

Storage temperature

T_j

150

˚C

N Type Package (DS)

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Collector cutoff

current

Symbol

I_CES

Conditions

min

typ

max

100

Unit

2SD1259

V_CE= 80V, I_E= 0

µA

2SD1259A

V_CE= 100V, I_E= 0

V_CE= 40V, I_B= 0

V_CB= 6V, I_C= 0

Collector cutoff current

Emitter cutoff current

I_CEO

I_EBO

µA

Collector to emitter 2SD1259

V_CEO

I_C= 25mA, I_B= 0

voltage

2SD1259A

Forward current transfer ratio

h_FE

V_CE= 4V, I_C= 0.5A

500

2500

Collector to emitter saturation voltage V_CE(sat)

I_C= 2A, I_B= 0.05A

Transition frequency

f_T

V_CE= 12V, I_C= 0.2A, f = 10MHz

MHz

^*h_FERank classification

Rank

h_FE

500 to 1000 800 to 1500 1200 to 2500

Note: Ordering can be made by the common rank (PQ rank h_FE= 500 to 1500) in the rank classification.

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