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2SD1227M/Q PDF预览

2SD1227M/Q

更新时间: 2024-11-06 12:59:47
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号双极晶体管开关
页数 文件大小 规格书
4页 126K
描述
2000mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR

2SD1227M/Q 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N最大集电极电流 (IC):2 A
集电极-发射极最大电压:32 V配置:SINGLE
最小直流电流增益 (hFE):120JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.8 VBase Number Matches:1

2SD1227M/Q 数据手册

 浏览型号2SD1227M/Q的Datasheet PDF文件第2页浏览型号2SD1227M/Q的Datasheet PDF文件第3页浏览型号2SD1227M/Q的Datasheet PDF文件第4页 
Transistors  
Medium Power Transistor (32V, 2A)  
2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 /  
2SD1919 / 2SD1227M  
FFeatures  
FExternal dimensions (Units: mm)  
1) Low VCE(sat).  
VCE(sat) = 0.5V (Typ.)  
(IC / IB = 2A / 0.2A)  
2) Complements the  
2SB1188 / 2SB1182 / 2SB1240 /  
2SB891F / 2SB822 / 2SB1277 /  
2SB911M  
FStructure  
Epitaxial planar type  
NPN silicon transistor  
(96-217-B24)  
256  

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