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2SC945 PDF预览

2SC945

更新时间: 2024-11-19 07:31:19
品牌 Logo 应用领域
TGS 晶体晶体管
页数 文件大小 规格书
1页 178K
描述
TO-92 Plastic-Encapsulate Transistors (NPN)

2SC945 数据手册

  
TIGER ELECTRONIC CO.,LTD  
TO-92 Plastic-Encapsulate Transistors  
TO-92  
2SC945  
TRANSISTOR (NPN )  
1.EMITTER  
2.COLLECTOR  
3. BASE  
FEATURE  
z
z
z
Excellent hFE linearity  
Low noise  
Complementary to A733  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
60  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
50  
V
5
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
150  
400  
125  
-55-125  
mA  
mW  
PC  
TJ  
Tstg  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
Min  
60  
50  
5
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC=1mA , IE=0  
IC=100μA , IB=0  
V
μ
IE=100 A, IC=0  
V
μA  
μA  
VCB=60V, IE=0  
0.1  
0.1  
0.1  
700  
Collector cut-off current  
ICEO  
VCE=45V  
, IB=0  
Emitter cut-off current  
IEBO  
VEB=5V ,IC=0  
μA  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE(sat)  
fT  
VCE=6V , IC=1mA  
70  
40  
DC current gain  
VCE=6V , IC=0.1mA  
IC=100mA, IB=10mA  
IC=100mA, IB=10mA  
VCE=6V,IC=10mA,f=30MHz  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
0.3  
1
V
V
200  
MHz  
pF  
Collector output capacitance  
Cob  
VCB=10V,IE=0,f=1MH  
VCE=6V,IC=0.1mA  
RG=10k,f=1MHz  
3.0  
10  
z
Noise figure  
NF  
dB  
CLASSIFICATION OF hFE(1)  
O
Y
GR  
200-400  
BL  
Rank  
Range  
70-140  
120-240  
350-700  
A,Jan,2011  

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