5秒后页面跳转
2SC5778 PDF预览

2SC5778

更新时间: 2024-02-08 11:58:06
品牌 Logo 应用领域
三洋 - SANYO 晶体显示器晶体管输出应用放大器局域网
页数 文件大小 规格书
4页 34K
描述
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

2SC5778 技术参数

生命周期:Transferred零件包装代码:TO-3PMLH
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.29.00.95
风险等级:5.46其他特性:HIGH RELIABILITY
最大集电极电流 (IC):15 A集电极-发射极最大电压:800 V
配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):4
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):85 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

2SC5778 数据手册

 浏览型号2SC5778的Datasheet PDF文件第2页浏览型号2SC5778的Datasheet PDF文件第3页浏览型号2SC5778的Datasheet PDF文件第4页 
Ordering number : ENN6992  
NPN Triple Diffused Planar Silicon Transistor  
2SC5778  
Ultrahigh-Definition CRT Display  
Horizontal Deflection Output Applications  
Features  
Package Dimensions  
unit : mm  
2174A  
High speed.  
High breakdown voltage(V  
High reliability(Adoption of HVP process).  
Adoption of MBIT process.  
=1600V).  
CBO  
[2SC5778]  
On-chip damper diode.  
5.6  
3.4  
16.0  
3.1  
2.8  
2.0  
2.1  
0.9  
0.7  
1
2
5.45  
3
1 : Base  
2 : Collector  
3 : Emitter  
Specifications  
SANYO : TO-3PMLH  
5.45  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
1600  
800  
5
V
V
I
15  
A
C
Collector Current (Pulse)  
I
35  
A
CP  
3.0  
85  
W
W
°C  
°C  
Collector Dissipation  
P
C
Tc=25°C  
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
150  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
=800V, I =0  
Unit  
min  
max  
10  
I
V
CB  
V
CE  
V
EB  
µA  
mA  
mA  
CBO  
E
Collector Cutoff Current  
Emitter Cutoff Current  
I
=1600V, R =0  
BE  
1.0  
200  
CES  
EBO  
I
=4V, I =0  
40  
C
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
62001 TS IM TA-3321 No.6992-1/4  

与2SC5778相关器件

型号 品牌 获取价格 描述 数据表
2SC5779 PANASONIC

获取价格

Silicon NPN epitaxial planar type
2SC5781 SANYO

获取价格

High-Frequency Low-Noise Amplifier and OSC Applications
2SC5782 SANYO

获取价格

UHF to S Band Low-Noise Amplifier and OSC Applications
2SC5783 SANYO

获取价格

2SC5783
2SC5784 TOSHIBA

获取价格

TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5784(TE85L,F) TOSHIBA

获取价格

TRANSISTOR NPN 20V 1.5A TSM
2SC5784_06 TOSHIBA

获取价格

Silicon NPN Epitaxial Type High-Speed Switching Applications
2SC5785 TOSHIBA

获取价格

TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5785 CJ

获取价格

SOT-89-3L
2SC5785(TE12L) TOSHIBA

获取价格

TRANSISTOR,BJT,NPN,10V V(BR)CEO,2A I(C),SC-62