Datasheet > 2SC5784_06

2SC5784_06

更新时间： 2024-02-24 01:47:09

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	138K
描述
Silicon NPN Epitaxial Type High-Speed Switching Applications

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2SC5784_06 数据手册

2SC5784

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5784

High-Speed Switching Applications

Unit: mm

DC-DC Converter Applications

•

High DC current gain: h

= 400 to 1000 (I = 0.15 A)

FE C

Low collector-emitter saturation voltage: V

= 0.12 V (max)

CE (sat)

High-speed switching: t = 45 ns (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

Collector-emitter voltage

Emitter-base voltage

CEX

CEO

EBO

1.5

Collector current

Base current

Pulse

2.5

150

750

500

150

−55 to 150

JEDEC

JEITA

―

t = 10 s

Collector power

dissipation

(Note 1)

TOSHIBA

2-3S1A

Junction temperature

°C

Weight: 0.01 g (typ.)

Storage temperature range

stg

Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm²)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2006-11-10

12 3 4 5

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