Datasheet > 2SC5785

2SC5785

更新时间： 2024-01-11 04:16:13

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管
页数	文件大小	规格书
5页	185K
描述
TOSHIBA Transistor Silicon NPN Epitaxial Type

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中文翻译

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2SC5785 数据手册

2SC5785

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5785

Industrial Applications

Unit: mm

High-Speed Switching Applications

DC-DC Converter Applications

Strobe Applications

•

High DC current gain: h

= 400 to 1000 (I = 0.2 A)

Low collector-emitter saturation voltage: V

= 0.12 V (max)

CE (sat)

High-speed switching: t = 25 ns (typ.)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CBO

CEO

EBO

Collector current

Pulse

2.0

3.5

Base current

200

2.0

JEDEC

JEITA

―

t = 10 s

Collector power

SC-62

2-5K1A

dissipation

(Note 1)

1.0

TOSHIBA

Junction temperature

150

−55 to 150

°C

Weight: 0.05 g (typ.)

Storage temperature range

stg

Note 1: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:

645 mm²)

Electrical Characteristics (Ta = 25°C)

Characteristics

Collector cut-off current

Symbol

Test Condition

= 20 V, I = 0

Min

Typ.

Max

Unit



100



CBO

Emitter cut-off current

= 7 V, I = 0

EBO

(BR) CEO

Collector-emitter breakdown voltage

= 10 mA, I = 0

400

200



(1)

(2)

= 2 V, I = 0.2 A



1000



DC current gain

= 2 V, I = 0.6 A



Collector-emitter saturation voltage

Base-emitter saturation voltage

Rise time

= 0.6 A, I = 12 mA



0.12

1.10



CE (sat)

BE (sat)

= 0.6 A, I = 12 mA



215

See Figure 1 circuit diagram.

∼

−

Switching time

6 V, R = 10 Ω

Storage time

Fall time



stg

= −I = 12 mA



2001-12-17

12 3 4 5

中文翻译

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