Datasheet > 2SC5615EB-T3

2SC5615EB-T3

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
31页	126K
描述
TRANSISTOR,BJT,NPN,10V V(BR)CEO,65MA I(C),SOT-416VAR

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2SC5615EB-T3 数据手册

2SC5615

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

CE = 1 V

VCE = 2 V

f = 1 GHz

100

Collector Current I

(mA)

Collector Current I (mA)

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

CE = 3 V

f = 1 GHz

100

Collector Current I (mA)

Data Sheet PU10081EJ02V0DS

1 2 3 456 7 8...31

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型号	品牌	描述	获取价格	数据表
2SC5615EB-T3-A	NEC	TRANSISTOR,BJT,NPN,10V V(BR)CEO,65MA I(C),SOT-416VAR	获取价格
2SC5615-FB	NEC	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil	获取价格
2SC5615-FB-A	NEC	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil	获取价格
2SC5615FB-A	NEC	TRANSISTOR,BJT,NPN,10V V(BR)CEO,65MA I(C),SOT-416VAR	获取价格
2SC5615FB-T3	NEC	TRANSISTOR,BJT,NPN,10V V(BR)CEO,65MA I(C),SOT-416VAR	获取价格
2SC5615-T3	NEC	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil	获取价格