Datasheet > 2SC5615EB-T3

2SC5615EB-T3

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
31页	126K
描述
TRANSISTOR,BJT,NPN,10V V(BR)CEO,65MA I(C),SOT-416VAR

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中文翻译

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数据手册

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2SC5615EB-T3 数据手册

2SC5615

TYPICAL CHARACTERISTICS (Unless otherwise specified, T^A= +25°C)

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

REVERSE TRANSFER CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

300

250

200

0.6

f = 1 MHz

Mounted on Glass Epoxy PCB

(1.08 cm²× 1.0 mm (t) )

0.5

0.4

0.3

0.2

0.1

150

140

100

125

(˚C)

150

1.0

Ambient Temperature T

Collector to Base Voltage VCB (V)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

100

CE = 1 V

CE = 2 V

0.1

0.01

0.001

0.01

0.001

0.0001

0.4

0.5

0.6

0.7

0.8

0.9

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Base to Emitter Voltage VBE (V)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

100

I : 30 A step

CE = 3 V

300

210

150

0.1

0.01

0.001

= 30

0.0001

0.4

0.5

0.6

0.7

0.8

0.9

Base to Emitter Voltage VBE (V)

Collector to Emitter Voltage VCE (V)

Data Sheet PU10081EJ02V0DS

1 234 5 6 7...31

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与2SC5615EB-T3相关器件

型号	品牌	描述	获取价格	数据表
2SC5615EB-T3-A	NEC	TRANSISTOR,BJT,NPN,10V V(BR)CEO,65MA I(C),SOT-416VAR	获取价格
2SC5615-FB	NEC	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil	获取价格
2SC5615-FB-A	NEC	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil	获取价格
2SC5615FB-A	NEC	TRANSISTOR,BJT,NPN,10V V(BR)CEO,65MA I(C),SOT-416VAR	获取价格
2SC5615FB-T3	NEC	TRANSISTOR,BJT,NPN,10V V(BR)CEO,65MA I(C),SOT-416VAR	获取价格
2SC5615-T3	NEC	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil	获取价格