Datasheet > 2SC5536

2SC5536

更新时间： 2024-02-28 06:06:06

品牌	Logo	应用领域
三洋 - SANYO		振荡器放大器
页数	文件大小	规格书
4页	38K
描述
VHF Low-Noise Amplifier , OSC Applications

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SC5536 技术参数

是否无铅：	不含铅	生命周期：	Active
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	0.94
JESD-609代码：	e6	湿度敏感等级：	1
端子面层：	Tin/Bismuth (Sn/Bi)	Base Number Matches：	1

2SC5536 数据手册

Ordering number:ENN6290

NPN Epitaxial Planar Silicon Transistor

2SC5536

VHF Low-Noise Amplifier , OSC Applications

Features

Package Dimensions

unit:mm

· Low noise : NF=1.8dB typ (f=150MHz).

· High gain : S21e ²=16dB typ (f=150MHz).

· Ultrasmall, slim flat-lead package.

(1.4mm×0.8mm×0.6mm)

2159

[2SC5536]

1.4

0.1

0.25

0.45

0.2

1 : Base

2 : Emitter

3 : Collector

SANYO : SSFP

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Symbol

Conditions

Ratings

Unit

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

EBO

˚C

Collector Dissipation

100

150

Junction Temperature

Storage Temperature

Tstg

–55 to +150

˚C

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

1.0

Collector Cutoff Current

=10V, I =0

µA

CBO

Emitter Cutoff Current

DC Current Gain

=1V, I =0

EBO

=2V, I =3mA

=2V, I =50mA

=2V, I =3mA

=10V, f=1MHz

200

Gain-Bandwidth Product

Output Capacitance

1.0

1.7

GHz

Cob

1.1

0.8

1.8

3.0

Reverse Transfer Capacitance

Cre

=10V, f=1MHz

| S21e |²

=2V, I =3mA, f=150MHz

Forward Transfer Gain

Noise Figure

1.8

Marking : MA

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

D1099TS (KOTO) TA-1678 No.6290–1/4

12 3 4

中文翻译

下载PDF

与2SC5536相关器件

型号	品牌	获取价格	描述	数据表
2SC5536A	SANYO	获取价格	VHF Low-Noise Amplifier, OSC Applications
2SC5536A_12	SANYO	获取价格	VHF Low-Noise Amplifier, OSC Applications
2SC5536A-TL-H	ONSEMI	获取价格	射频晶体管，NPN 单，12 V，50 mA，fT = 1.7 GHz
2SC5537	SANYO	获取价格	Low-Voltage, Low-Current High-frequency Amplifier Applications
2SC5538	SANYO	获取价格	VHF to UHF OSC, High-Frequency Amplifier Applications
2SC5538A	SANYO	获取价格	NPN Epitaxial Planar Silicon Transistor VHF to UHF Band OSC, High-Frequency Amplifier Appl
2SC5539	SANYO	获取价格	VHF to UHF Low-Noise Wide-Band Amplifier Applications
2SC5539A	SANYO	获取价格	NPN Epitaxial Planar Silicon Transistor NPN Epitaxial Planar Silicon Transistor VHF to UHF
2SC554	SECOS	获取价格	NPN Plastic Encapsulated Transistor
2SC554	CJ	获取价格	SOT-89-3L

与2SC5536相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

10
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

10
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

12
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

15

产品中心

服务支持

精选活动

关于我们

帮助中心

2SC5536

2SC5536 技术参数

2SC5536 数据手册

与2SC5536相关器件

与2SC5536相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SC5536

2SC5536 技术参数

2SC5536 数据手册

与2SC5536相关器件

与2SC5536相关文章

您还可以找

您在本页遇到什么问题？