Datasheet > 2SC554

2SC554

更新时间： 2024-10-02 14:53:55

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1930K
描述
SOT-89-3L

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2SC554 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

2SC554

TRANSISTOR (NPN)

1. BASE

FEATURES

2. COLLECTOR

z Low Saturation Voltage

z High Speed Switching

3. EMITTER

MARKING: C554

C554

Solid dot = Green molding compound device.

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol Para

meter

Value

100

Unit

Equivalent Circuit

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

500

250

℃/W

R_θJA

Operation Junction and

Storage Temperature Range

-55 ~ +150

T_J,T_stg

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=0.1mA,I_E=0

I_C=1mA,I_B=0

Min

100

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=0.1mA,I_C=0

V_CB=100V,I_E=0

V_EB=4V,I_C=0

µA

Emitter cut-off current

I_EBO

DC current gain

h_FE

V_CE=3V, I_C=100mA

I_C=500mA,I_B=25mA

270

0.2

0.3

Collector-emitter satu

ration voltage

V_CE(sat)

_IC=1A,I_B= mA

f_T

VCE=5V,IC=100mA

MHz

Transition frequency

Collector output capacitance

C_ob

V_CB=10V, I_E=0, f=1MHz

www.jscj-elec.com

Rev. - 2.3

12 3 4

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