Datasheet > 2SC5368_06

2SC5368_06

更新时间： 2024-09-27 04:26:07

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	133K
描述
Silicon NPN Triple Diffused Type

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2SC5368_06 数据手册

2SC5368

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC5368

High-Voltage Switching Applications

Unit: mm

Switching Regulator Applications

DC-DC Converter Applications

•

High speed: t = 0.5 μs (max), t = 0.3 μs (max) (I = 0.8 A)

High breakdown voltage: V

= 450 V

CEO

High DC current gain: h

= 20 (min) (I = 0.2 A)

Absolute Maximum Ratings (Tc = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

650

Collector-emitter voltage

Emitter-base voltage

450

Collector current

Base current

Pulse

0.5

JEDEC

JEITA

―

Ta = 25°C

Tc = 25°C

1.5

Collector power

dissipation

TOSHIBA

2-8H1A

Junction temperature

150

°C

Weight: 0.82 g (typ.)

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-10

12 3 4

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