Datasheet > 2SC5369(NE696M01)

2SC5369(NE696M01)

更新时间： 2024-02-21 09:49:14

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12页	63K
描述
Discrete

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数据手册

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2SC5369(NE696M01) 数据手册

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PRELIMINARY DATA SHEET

SILICON TRANSISTOR

2SC5369

NPN EPITAXIAL SILICON TRANSISTOR FOR

MICROWAVE AMPLIFICATION

FEATURES

PACKAGE DIMENSION (in mm)

• High fT

2.1±0.1

14 GHz TYP.

1.25±0.1

• High gain

| S²¹e | = 14 dB TYP.

@f = 2 GHz, V^CE= 3 V, IC = 10 mA

• NF = 1.3 dB, @f = 2 GHz, V^CE= 3 V, IC = 3 mA

• 6-pin small mini mold package

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

SYMBOL

VCBO

VCEO

VEBO

RATING

UNIT

°C

Total Power Dissipation

Junction Temperature

Storage Temperature

150

PIN CONNECTIONS

150

1. Emitter

2. Emitter

3. Base

4. Emitter

5. Emitter

6. Collector

Tstg

–65 to +150

Document No. P11644EJ1V0DS00 (1st edition)

Date Published September 1996 P

Printed in Japan

1996

12 3 4 5 6 7...12

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与2SC5369(NE696M01)相关器件

型号	品牌	获取价格	描述	数据表
2SC5369-FB	NEC	获取价格	暂无描述
2SC5369-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), L Band, Silicon, NPN, PLASTIC, SO-6
2SC536D	CDIL	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2SC536E	CDIL	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2SC536F	CDIL	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2SC536G	CDIL	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2SC536G	CJ	获取价格	Transistor
2SC536H	CDIL	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2SC536H	CJ	获取价格	Transistor
2SC536K	CDIL	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92