2SC5363J

更新时间： 2024-02-15 05:27:32

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
2页	40K
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中文翻译

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数据手册

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2SC5363J 数据手册

Transistor

2SC5363(Tentative)

Silicon NPN epitaxial planer type

For low-voltage high-frequency amplification

Unit: mm

1.6±0.15

0.8±0.1

0.4

Features

High transition frequency f_T.

■

●

Small collector output capacitance C_ob.

●

SS-Mini type package, allowing downsizing of the equipment

and automatic insertion through the tape packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

0.2±0.1

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

1:Base

2:Emitter

3:Collector

EIAJ:SC–75

SS–Mini Type Package

˚C

Collector power dissipation

Junction temperature

Storage temperature

P_C

125

T_j

125

Marking symbol : 3Y

T_stg

–55 ~ +125

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

Collector cutoff current

Emitter cutoff current

Forward current transfer ratio

Collector output capacitance

Transition frequency

Foward transfer gain

Noise figure

V_CB= 5V, I_E= 0

V_EB= 1V, I_C= 0

_CE= 3V, I_C= 10mA

I_EBO

h_FE

C_ob

f_T

µA

100

0.4

200

0.7

V_CB= 3V, I_E= 0, f = 1MHz

GHz

V_CE= 3V, I_C= 10mA, f = 1.5GHz

| S_21e

_CE= 0.3V, I_C= 1mA, f = 0.9GHz

6.5

1.7

V_CE= 0.3V, I_C= 1mA, f = 0.9GHz

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