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2SC5343SF PDF预览

2SC5343SF

更新时间: 2024-11-18 05:56:59
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管
页数 文件大小 规格书
1页 37K
描述
NPN Silicon Transistor

2SC5343SF 数据手册

  
SMD Type  
Transistors  
NPN Silicon Transistor  
2SC5343SF  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
3
Features  
Low collector saturation voltage: VCE=0.25V(Max.)  
Low output capacitance:Cob=2pF(Typ.)  
1
2
+0.1  
0.95  
-0.1  
+0.05  
-0.01  
0.1  
+0.1  
1.9  
-0.1  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
60  
50  
5
V
V
150  
mA  
mW  
Collector dissipation  
Junction temperature  
Storage temperature  
PC  
200  
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO IC=100ìA , IE=0  
BVCEO IC=1mA , IB=0  
BVEBO IE=10ìA, IC=0  
60  
50  
5
V
V
ICBO  
IEBO  
hFE  
VCB=60V, IE=0  
VEB=5V, IC=0  
0.1  
0.1  
ìA  
ìA  
Emitter cutoff current  
DC current transfer ratio  
Collector-emitter saturation voltage  
Transition frequency  
VCE=6V, IC=2mA  
70  
80  
700  
0.25  
VCE(sat) IC/IB=100mA/10mA  
V
MHz  
pF  
fT  
VCE=10V, IC=1mA,  
Output capacitance  
Cob  
NF  
VCB=10V, IE=0, f=1MHz  
2
3.5  
10  
Noise figure  
VCE=6V, IC=0.1mA, f=1KHz, Rg=10kÙ  
dB  
hFE Classification  
DA  
Marking  
Rank  
O
Y
G
L
hFE  
70 140  
120 240  
200 400  
300 700  
1
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