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2SC4684(2-7B1A) PDF预览

2SC4684(2-7B1A)

更新时间: 2024-02-26 00:08:21
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器晶体管
页数 文件大小 规格书
4页 144K
描述
TRANSISTOR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal

2SC4684(2-7B1A) 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Lifetime Buy包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.49外壳连接:COLLECTOR
最大集电极电流 (IC):5 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):250
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

2SC4684(2-7B1A) 数据手册

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2SC4684  
TOSHIBA Transistor Silicon NPN Epitaxial Type  
2SC4684  
Strobe Flash Applications  
Unit: mm  
Medium Power Amplifier Applications  
High DC current gain  
: h  
= 800 to 3200 (V  
= 2 V, I = 0.5 A)  
C
FE (1)  
FE (2)  
CE  
: h  
= 250 (V  
= 2 V, I = 4 A)  
CE  
C
Low collector saturation voltage  
: V = 0.5 V (max) (I = 4 A, I = 40 mA)  
CE (sat)  
High power dissipation  
C
B
: P = 10 W (Tc = 25°C), P = 1.0 W (Ta = 25°C)  
C
C
Maximum Ratings  
(Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
V
Collector-base voltage  
V
50  
40  
20  
8
CBO  
V
CES  
CEO  
EBO  
Collector-emitter voltage  
Emitter-base voltage  
V
V
V
V
JEDEC  
JEITA  
DC  
I
5
C
Collector current  
Base current  
A
Pulse  
I
8
TOSHIBA  
2-7B1A  
CP  
(Note)  
Weight: 0.36 g (typ.)  
I
0.5  
1.0  
A
B
Ta = 25°C  
Tc = 25°C  
Collector power  
dissipation  
P
W
C
10  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
stg  
55 to 150  
Note: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)  
JEDEC  
JEITA  
TOSHIBA  
2-7J1A  
Weight: 0.36 g (typ.)  
1
2004-07-26  

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