Datasheet > 2SC4687_2015

2SC4687_2015

更新时间： 2022-02-26 13:19:11

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	155K
描述
Silicon NPN Power Transistors

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2SC4687_2015 数据手册

JMnic

Product Specification

Silicon NPN Power Transistors

2SC4687

DESCRIPTION

·With TO-3PN package

·High breakdown voltage

·Fast switching speed

·Wide area of safe operation

APPLICATIONS

·For switching regulator applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

UNIT

500

400

Open base

Open collector

I_CM

Collector current-peak

Base current

I_B

T_a=25℃

T_C=25℃

2.5

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3

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