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2SC4687 PDF预览

2SC4687

更新时间: 2024-02-04 21:40:33
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 119K
描述
Silicon NPN Power Transistors

2SC4687 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknown风险等级:5.77
最大集电极电流 (IC):7 A集电极-发射极最大电压:400 V
配置:SINGLEJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SC4687 数据手册

 浏览型号2SC4687的Datasheet PDF文件第2页浏览型号2SC4687的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC4687  
DESCRIPTION  
·With TO-3PN package  
·High breakdown voltage  
·Fast switching speed  
·Wide area of safe operation  
APPLICATIONS  
·For switching regulator applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-3PN) and symbol  
3
Emitter  
Absolute maximum ratings (Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
V
500  
400  
7
Open base  
V
Open collector  
V
7
A
ICM  
Collector current-peak  
Base current  
14  
A
IB  
3
A
Ta=25  
TC=25℃  
2.5  
60  
PC  
Collector power dissipation  
W
Tj  
Junction temperature  
Storage temperature  
150  
-55~150  
Tstg  

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